june.2011.version1.2 magnachipsemiconductorltd . 1 MDS1521Csinglenchanneltrenchmosfet30v absolutemaximumratings(ta=25 o c) characteristics symbol rating unit drainsourcevoltage v dss 30 v gatesourcevoltage v gss 20 v continuousdraincurrent (1) t c =25 o c i d 28.2 a t c =70 o c 22.6 t a =25 o c 18.8 (3) t a =70 o c 15.1 (3) pulseddraincurrent i dm 40 a powerdissipation t c =25 o c p d 5.6 w t c =70 o c 3.6 t a =25 o c 2.5 (3) t a =70 o c 1.6 (3) singlepulseavalancheenergy (2) e as 223 mj junctionandstoragetemperaturerange t j ,t stg 55~150 o c thermalcharacteristics characteristics symbol rating unit thermalresistance,junctiontoambient (1) r ja 50 o c/w thermalresistance,junctiontocase r jc 22 MDS1521 singlenchanneltrenchmosfet30v,28.2a,4.0m features v ds =30v i d =28.2a@v gs =10v r ds(on) <4.0m @v gs =10v <5.5m @v gs =4.5v 100%uiltested 100%rgtested generaldescription theMDS1521usesadvancedmagnachip smosfet technology,whichprovideshighperformanceinons tate resistance,fastswitchingperformanceandexcellen t quality. MDS1521issuitablefordc/dcconvertera nd generalpurposeapplications. d g s 1(s) 2(s) 3(s) 4(g) 8(d) 7(d) 6(d) 5(d)
june.2011.version1.2 magnachipsemiconductorltd . 2 MDS1521Csinglenchanneltrenchmosfet30v orderinginformation partnumber temp.range package packing quantity ro hsstatus MDS1521urh 55~150 o c soic8 tape&reel 3000units halogenfree electricalcharacteristics(t j = 25 o c) characteristics symbol testcondition min typ max u nit staticcharacteristics drainsourcebreakdownvoltage bv dss i d =250a,v gs =0v 30 v gatethresholdvoltage v gs(th) v ds =v gs ,i d =250a 1.3 1.9 2.7 draincutoffcurrent i dss v ds =30v,v gs =0v 1 a t j =55 o c 5 gateleakagecurrent i gss v gs =20v,v ds =0v 0.1 drainsourceonresistance r ds(on) v gs =10v,i d =15a 3.5 4.0 m t j =125 o c 5.1 5.8 v gs =4.5v,i d =12a 4.5 5.5 forwardtransconductance g fs v ds =5v,i d =15a 55 s dynamiccharacteristics totalgatecharge q g(10v) v ds =15.0v,i d =15a, v gs =10v 26.8 38.3 50.0 nc totalgatecharge q g(4.5v) 12.7 18.2 23.7 gatesourcecharge q gs 7.6 gatedraincharge q gd 13.3 inputcapacitance c iss v ds =15.0v,v gs =0v, f=1.0mhz 1760 2514 3269 pf reversetransfercapacitance c rss 163 233 304 outputcapacitance c oss 340 486 632 turnondelaytime t d(on) v gs =10v,v ds =15.0v, i d =15a,r g =3.0 9.3 ns risetime t r 24.0 turnoffdelaytime t d(off) 39.2 falltime t f 14.0 gateresistance r g f=1mhz 0.5 0.9 3.0 drainsourcebodydiodecharacteristics sourcedraindiodeforwardvoltage v sd i s =15a,v gs =0v 0.81 1.1 v bodydiodereverserecoverytime t rr i f =15a,dl/dt=100a/s 28.1 42.2 ns bodydiodereverserecoverycharge q rr 19.6 29.3 nc note: 1.surfacemountedfr4boardbyjedec(jesd517) 2.e as istestedatstartingtj=25 ,l=0.1mh,i as =37.3a,v dd =27v,v gs =10v 3.t<10sec.
june.2011.version1.2 magnachipsemiconductorltd . 3 MDS1521Csinglenchanneltrenchmosfet30v fig.5transfercharacteristics fig.1onregioncharacteristics fig.2on resistancevariationwith draincurrentandgatevoltage fig.3on resistancevariationwith temperature fig .4on resistancevariationwith gatetosourcevoltage fig.6 body diode forward voltage variation with source current and temperature 50 25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v gs =10v i d =15a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c] 2 4 6 8 10 0 10 20 30 40 notes: i d =15a t a =25 r ds(on) [m ], drainsourceonresistance v gs ,gatetosourcevolatge[v] 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 10 1 10 0 10 1 t a =25 notes: v gs =0v i dr ,reversedraincurrent[a] v sd ,sourcedrainvoltage[v] 0 1 2 3 4 5 0 4 8 12 16 v gs ,gatesourcevoltage[v] t a =25 notes: v ds =5v i d ,draincurrent[a] 5 10 15 20 25 30 0 2 4 6 8 10 v gs =10v v gs =4.5v drainsourceonresistance[m ] i d ,draincurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 8.0v 4.5v 3.5v v gs =10v 5.0v 3.0v i d ,draincurrent[a] v ds ,drainsourcevoltage[v]
june.2011.version1.2 magnachipsemiconductorltd . 4 MDS1521Csinglenchanneltrenchmosfet30v fig.7gatechargecharacteristics fig.8capacitancecharacteristics fig.9maximumsafeoperatingarea fig.10 maximum drain current v s. casetemperature fig.11 transient thermal response curve 0 5 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10 note:i d =15a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc] 25 50 75 100 125 150 0 5 10 15 20 25 30 35 i d ,draincurrent[a] t c ,casetemperature[ ] 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 3 10 2 10 1 10 0 10 1 10 2 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z jc *r jc (t)+t c singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc ,thermalresponse t 1 ,rectangularpulseduration[sec] 0 5 10 15 20 25 30 0 500 1000 1500 2000 2500 3000 3500 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes; 1.v gs =0v 2.f=1mhz c rss c oss c iss capacitance[pf] v ds ,drainsourcevoltage[v] 10 1 10 0 10 1 10 2 10 1 10 0 10 1 10 2 1ms 1s 100ms dc 10ms 10s operationinthisarea islimitedbyr ds(on) singlepulse t j =maxrated t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v]
june.2011.version1.2 magnachipsemiconductorltd . 5 MDS1521Csinglenchanneltrenchmosfet30v physicaldimensions 8leads,soic dimensionsareinmillimetersunlessotherwisespec ified disclaimer: theproductsarenotdesignedforuseinhostileen vironments,including,withoutlimitation,aircraft ,nuclearpower generation, medical appliances, and devices or syst ems in which malfunction of any product can reasona bly be expected to result in a personal injury. sellers customers using or selling sellers products for us e in such applicationsdosoattheirownriskandagreetof ullydefendandindemnifyseller. magnachipreservestherighttochangethespecific ationsandcircuitrywithoutnoticeatanytime.ma gnachipdoesnotconsiderresponsibility for use of any circuitry other than circuitry entir ely included in a magnachip product. is a registered trademark of magnachip semiconductorltd.
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